FGH40T120SMDL4
Description
FGH40T120SMDL4 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 1200 V ±25 V ±30 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ILM (Note 1) Clamped Inductive Load Current TC = 25°C 160 A ICM (Note 2) Pulsed Collector Current 160 A IF Diode Continuous Forward Current TC = 25°C 80 A Diode Continuous Forward Current TC = 100°C 40 A IFM Diode Maximum Forward Current 240 A PD Maximum Power Dissipation TC = 25°C 555 W TC = 100°C 277 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses.
Key Features
- FS Trench Technology, Positive Temperature Coefficient
- Excellent Switching Performance due to Kelvin Emitter Pin
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- This Device is Pb-Free and is RoHS Compliant
