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FGH40N65UFDTU - IGBT

General Description

stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Key Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
  • High Input Impedance.
  • Fast Switching.
  • Qualified to Automotive Requirements of AEC.
  • Q101 (FGH40N65UFDTU.
  • F085).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for FGH40N65UFDTU (Reference)

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum ...

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GBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N65UFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.onsemi.