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FGH40N65UFDTU - IGBT

Description

stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
  • High Input Impedance.
  • Fast Switching.
  • Qualified to Automotive Requirements of AEC.
  • Q101 (FGH40N65UFDTU.
  • F085).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N65UFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.onsemi.
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