FGH30S130P igbt equivalent, igbt.
* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.75 V @ IC = 30 A
* High Input Impedance
* This Device is Pb−Free and is RoHS Compliant
Applic.
The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for ind.
Using advanced field stop trench and shorted−anode technology,
ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with e.
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