FGD3N60LSD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* High Current Capability
* Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
* High Input Impedance Applications
* HID Lamp Applications
* Pie.

Application

* HID Lamp Applications
* Piezo Fuel Injection Applications C Description ON Semiconductor's Insulated Gate Bip.

Description

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature. C G E D-PAK G E Absolute Maximum Ratings Symbol Desc.

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