FGD3N60LSD - IGBT

Description

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses.

The device is designed for applica-tions where very low On-Voltage Drop is a required feature.

Features

High Current Capability.
Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A.
High Input Impedance.

onsemi

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Datasheet Details

Part number	FGD3N60LSD
Manufacturer	onsemi
File Size	858.79 KB
Description	IGBT
Datasheet	FGD3N60LSD Datasheet

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Full PDF Text Transcription

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FGD3N60LSD IGBT FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance Applications • HID Lamp Applications • Piezo Fuel Injection Applications C Description ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature.

Published: Oct 2, 2022 |