Datasheet4U Logo Datasheet4U.com

FGD3245G2-F085C - N-Channel IGBT

Features

  • SCIS Energy = 320 mJ at TJ = 25C.
  • Logic Level Gate Drive.
  • Low Saturation Voltage.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

  • FGD3245G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
  • FGD3040G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
  • FGD3325G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
  • FGD3440G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
  • FGD3N60LSD - IGBT (Fairchild Semiconductor)
  • FGD3N60UNDF - Short Circuit Rated IGBT (Fairchild Semiconductor)
  • FGD2N40L - 400V N-Channel Logic Level IGBT (Fairchild Semiconductor)
  • FGD430C4009 - TFT-LCD module (FEIGEDA)
  • FGD4536 - 360V PDP IGBT (Fairchild Semiconductor)
  • FGD5T120SH - IGBT (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT FGD3245G2-F085C Features  SCIS Energy = 320 mJ at TJ = 25C  Logic Level Gate Drive  Low Saturation Voltage  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant Applications  Automotive Ignition Coil Driver Circuits  High Current Ignition System  Coil on Plug Application MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 450 V BVECS Emitter to Collector Voltage − Reverse 28 V Battery Condition (IC = 10 mA) ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG ISCIS = 14.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 25C (Note 1) ISCIS = 10.9 A, L = 3.
Published: |