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FGD3050G2V - N-Channel IGBT

Features

  • SCIS Energy = 300 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Device is Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Device is Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 500 20 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.
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