logo

FGA25S125P Datasheet, ON Semiconductor

FGA25S125P igbt equivalent, 25a shorted-anode igbt.

FGA25S125P Avg. rating / M : 1.0 rating-12

datasheet Download

FGA25S125P Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
* High Input Impedance
* RoHS Compliant Applications
* Induction Heating.

Application


* Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technolo.

Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with .

Image gallery

FGA25S125P Page 1 FGA25S125P Page 2 FGA25S125P Page 3

TAGS

FGA25S125P
25A
Shorted-anode
IGBT
FGA25N120
FGA25N120AN
FGA25N120AND
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts