FGA15N120ANTDTU Overview
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. C GCE TO-3P Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Description...
FGA15N120ANTDTU Key Features
- NPT Trench Technology, Positive temperature coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
- Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C
- Extremely Enhanced Avalanche Capability
