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FGA15N120ANTDTU - IGBT

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • NPT Trench Technology, Positive temperature coefficient.
  • Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C.
  • Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C.
  • Extremely Enhanced Avalanche Capability.

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FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C • Extremely Enhanced Avalanche Capability Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.
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