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FFSP2065BDN-F085 Datasheet, ON Semiconductor

FFSP2065BDN-F085 diode equivalent, silicon carbide schottky diode.

FFSP2065BDN-F085 Avg. rating / M : 1.0 rating-13

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FFSP2065BDN-F085 Datasheet

Features and benefits


* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

Application


* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters This document contains information on .

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

Image gallery

FFSP2065BDN-F085 Page 1 FFSP2065BDN-F085 Page 2 FFSP2065BDN-F085 Page 3

TAGS

FFSP2065BDN-F085
Silicon
Carbide
Schottky
Diode
FFSP2065B
FFSP2065A
FFSP20120A
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

Related datasheet

FFSP2065BDN-F085

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