FFSP2065BDN-F085 diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .
* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters
This document contains information on .
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
Image gallery
TAGS