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FFSH5065B-F085 SiC Schottky Diode

FFSH5065B-F085 Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 50 A, 650 V, D2, TO-247-2L FFSH5065B-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSH5065B-F085 Features

* Max Junction Temperature 175°C
* Avalanche Rated 225 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable
* T

FFSH5065B-F085 Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters DATA SHEET www. onsemi. com TO
* 247
* 2LD CASE 340DA 1. Cathode 2. Anode Schottky Diode MARKING DIAGRAM AYWWKK FFSH 5065B A YWW KK FFSH5065B = Assembly Plant Code = D

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SiC Schottky Diode ON Semiconductor
ON Semiconductor FFSH5065B-F085-like datasheet