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FFPF15S60S - Diode

General Description

characteristics.

implanted epitaxial planar construction.

This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications.

Key Features

  • Stealth Recovery Trr= 35 ns (@ IF= 15 A).
  • Max Forward Voltage, VF= 2.6 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Improved dv/dt Capability.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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15 A, 600 V, STEALTHt II Diode FFPF15S60S Description The FFPF15S60S is STEALTHt II rectifier with soft recovery characteristics. It is silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Stealth Recovery Trr= 35 ns (@ IF= 15 A) • Max Forward Voltage, VF= 2.