FDT4N50NZU mosfet equivalent, n-channel mosfet.
* Typ. RDS(on) = 2.42 W
* Ultra Low Gate Charge (Typ. Qg = 9.1 nC)
* 100% Avalanche Tested
* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS.
that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power conv.
Image gallery
Download