FDT3612 mosfet equivalent, n-channel mosfet.
* 3.7 A, 100 V
* RDS(ON) = 120 mW @ VGS = 10 V
* RDS(ON) = 130 mW @ VGS = 6 V
* Fast Switching Speed
* Low Gate Charge (14 nC Typ)
* High Performa.
* DC/DC Converter
* Power Management
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
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This N−Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOS.
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