FDT3612 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
FDT3612 Key Features
- 3.7 A, 100 V
- RDS(ON) = 120 mW @ VGS = 10 V
- RDS(ON) = 130 mW @ VGS = 6 V
- Fast Switching Speed
- Low Gate Charge (14 nC Typ)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used
- This is a Pb-Free Device