FDT1600N10ALZ mosfet equivalent, n-channel mosfet.
* RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04.
* Consumer Appliances
* LED TV and Monitor
* Synchronous Rectification
* Uninterruptible Power Supply
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance.
Features
* RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
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