logo

FDT1600N10ALZ Datasheet, ON Semiconductor

FDT1600N10ALZ mosfet equivalent, n-channel mosfet.

FDT1600N10ALZ Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 416.38KB)

FDT1600N10ALZ Datasheet

Features and benefits


* RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04.

Application


* Consumer Appliances
* LED TV and Monitor
* Synchronous Rectification
* Uninterruptible Power Supply

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance. Features
* RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
.

Image gallery

FDT1600N10ALZ Page 1 FDT1600N10ALZ Page 2 FDT1600N10ALZ Page 3

TAGS

FDT1600N10ALZ
N-Channel
MOSFET
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts