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FDT1600N10ALZ Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance.

Overview

MOSFET – N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General.

Key Features

  • RDS(on) = 121 mW (Typ. ) @ VGS = 10 V, ID = 2.8 A.
  • RDS(on) = 156 mW (Typ. ) @ VGS = 5 V, ID = 1.8 A.
  • Low Gate Charge (Typ. 2.9 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV.
  • RoHS Compliant.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDT1600N10ALZ MOSFET Fairchild Semiconductor

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