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FDS8949 Datasheet, ON Semiconductor

FDS8949 mosfet equivalent, dual n-channel mosfet.

FDS8949 Avg. rating / M : 1.0 rating-15

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FDS8949 Datasheet

Features and benefits


* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
.

Application

where low in-line power loss and fast switching are required. Applications
* Inverter
* Power suppliers D2 D2 D.

Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suit.

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FDS8949 Page 1 FDS8949 Page 2 FDS8949 Page 3

TAGS

FDS8949
Dual
N-Channel
MOSFET
FDS8947A
FDS8949-F085
FDS89141
ON Semiconductor

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