* rDS(on) = 6.0mΩ, VGS = 10V, ID = 15A
* rDS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A
* High performance trench technology for extremely low rDS(on)
* Low gate c.

* DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Semiconductor Components Industries,.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.

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