* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low.

* DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS.

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.

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