FDS8878-F123 mosfet equivalent, n-channel mosfet.
* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low.
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.
Image gallery
TAGS
Download (Size : 374.85KB)