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MOSFET – N-Channel, POWERTRENCH)
40 V, 7.6 A, 29 mW
FDS8449, FDS8449-G
General Description These N−Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
Features
• 7.6 A, 40 V RDS(on) = 29 mW @ VGS = 10 V
RDS(on) = 36 mW @ VGS = 4.5 V
• High Power Handling Capability in a Widely Used Surface Mount
Package
• Pb−Free, Halide Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol
Parameter
Ratings Unit
VDSS VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current − Continuous (Note 1a) − Pulsed
40
V
±20
V
A 7.6 50
PD
Power Dissipation for Single Operation
W
(Note 1a)
2.
FDS8449 Datasheet
