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FDS8433A - P-Channel MOSFET

Description

This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.

This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V.
  • Fast switching speed.
  • High density cell design for extremely low RDS(on).
  • High power and current handling capability. D D 5 D D 6 7 G SO-8 SS S 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (.

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Datasheet Details

Part number FDS8433A
Manufacturer Onsemi
File Size 171.51 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS8433A Datasheet
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Full PDF Text Transcription

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FDS8433A FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Applications • Load switch • DC/DC converter • Battery protection Features • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • Fast switching speed. • High density cell design for extremely low RDS(on). • High power and current handling capability.
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