FDS6912A
FDS6912A is Dual N-Channel MOSFET manufactured by onsemi.
Description
These N- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- 6.0 A, 30 V
RDS(ON) = 28 m W @ VGS = 10 V RDS(ON) = 35 m W @ VGS = 4.5 V
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb- Free and Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±20
Drain Current
- Continuous (Note 1a)
- Pulsed
PD Power Dissipation (Note 1a) for Single Operation
(Note 1b)
(Note 1c)
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rq JA
Thermal Resistance, Junction- to- Ambient (Note 1a)
Rq JC
Thermal Resistance, Junction- to- Case (Note...
