FDS6912A mosfet equivalent, dual n-channel mosfet.
* 6.0 A, 30 V
RDS(ON) = 28 mW @ VGS = 10 V RDS(ON) = 35 mW @ VGS = 4.5 V
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for.
where low in−line power loss and fast switching are required.
Features
* 6.0 A, 30 V
RDS(ON) = 28 mW @ VGS = 10 V RD.
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