FDS6912A mosfet equivalent, dual n-channel mosfet.
* 6.0 A, 30 V
RDS(ON) = 28 mW @ VGS = 10 V RDS(ON) = 35 mW @ VGS = 4.5 V
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for.
where low in−line power loss and fast switching are required.
Features
* 6.0 A, 30 V
RDS(ON) = 28 mW @ VGS = 10 V RD.
These N−Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
These devices are well suited for low .
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