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FDS6900AS Key Features

  • Q2: Optimized to Minimize Conduction Losses Includes SyncFET
  • RDS(on) = 22 mW at VGS = 10 V
  • RDS(on) = 28 mW at VGS = 4.5 V
  • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC
  • RDS(on) = 27 mW at VGS = 10 V
  • RDS(on) = 34 mW at VGS = 4.5 V
  • 100% RG (Gate Resistance) Tested
  • These Devices are Pb-Free and are RoHS pliant

Other FDS6900AS Datasheets

Manufacturer Part Number Description
Fairchild Semiconductor Logo Fairchild FDS6900AS Dual N-Ch PowerTrench SyncFET
Fairchild Semiconductor Logo Fairchild FDS6900S Dual N-Ch PowerTrench SyncFet

View all FDS6900AS datasheets →

FDS6900AS Description

The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook puters and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on...