Datasheet4U Logo Datasheet4U.com

FDS6900AS - Dual N-Channel MOSFET

Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc

dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

channel, log

Features

  • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
  • RDS(on) = 22 mW at VGS = 10 V.
  • RDS(on) = 28 mW at VGS = 4.5 V.
  • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
  • RDS(on) = 27 mW at VGS = 10 V.
  • RDS(on) = 34 mW at VGS = 4.5 V.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications.

📥 Download Datasheet

Datasheet preview – FDS6900AS

Datasheet Details

Part number FDS6900AS
Manufacturer onsemi
File Size 315.10 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS6900AS Datasheet
Additional preview pages of the FDS6900AS datasheet.

📁 Similar Datasheet

  • FDS6900AS - Dual N-Ch PowerTrench SyncFET (Fairchild Semiconductor)
  • FDS6900S - Dual N-Ch PowerTrench SyncFet (Fairchild Semiconductor)
  • FDS6910 - MOSFET (Fairchild Semiconductor)
  • FDS6911 - MOSFET (Fairchild Semiconductor)
  • FDS6912 - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET (Fairchild Semiconductor)
  • FDS6912A - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • FDS6930A - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • FDS6930B - Dual N-Channel MOSFET (Kexin)
  • FDS6930B - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • FDS6961A - Dual N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G General Description The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
Published: |