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FDS6898AZ-F085 - Dual N-Channel MOSFET

Key Features

  • These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V.
  • Low gate charge (16 nC typical).
  • ESD protection diode (note 3) These devices are well suited for low voltage and battery powered.

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FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V • Low gate charge (16 nC typical) • ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.