FDS6898AZ-F085 Description
Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V Low gate charge (16 nC typical) ESD protection diode (note 3) These devices are well suited for low voltage and...
FDS6898AZ-F085 Key Features
- 9.4 A, 20 V
- Low gate charge (16 nC typical)
- ESD protection diode (note 3)
FDS6898AZ-F085 Applications
- High performance trench technology for extremely low RDS(ON)