FDS6898A Datasheet | onsemi

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. - 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V - Low gate charge (16 nC typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling...