FDS4685 Datasheet | onsemi

Features - - 8.2 A, - 40 V RDS(ON) = 0.027 Ω @ VGS = - 10 V RDS(ON) = 0.035 Ω @ VGS = - 4.5 V - Fast switching speed - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - Power management - Load switch - Battery protection General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V). D D D D SO-8 Pin 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Ratings - 40 ±20 - 8.2 - 50 2.5 1.4 1.2 - 55 to...