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FDS4685 - 40V P-Channel Power MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.

20V).

Key Features

  • 8.2 A,.
  • 40 V RDS(ON) = 0.027 Ω @ VGS =.
  • 10 V RDS(ON) = 0.035 Ω @ VGS =.
  • 4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet Details

Part number FDS4685
Manufacturer onsemi
File Size 624.06 KB
Description 40V P-Channel Power MOSFET
Datasheet download datasheet FDS4685 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4685 40V P-Channel PowerTrench® MOSFET FDS4685 40V P-Channel PowerTrench® MOSFET Features ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ Power management ■ Load switch ■ Battery protection General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).