FDPF17N60NT
FDPF17N60NT is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, Uni FETE II
600 V, 17 A, 340 m W
Description Uni FET II MOSFET is onsemi’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on- state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate- source ESD diode allows Uni FET II MOSFET to withstand over 2 k V HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
- RDS(on) = 290 m W (Typ.) @ VGS = 10 V, ID = 8.5 A
- Low Gate Charge (Typ. 48 n C)
- Low Crss (Typ. 23 p F)
- 100% Avalanche Tested
- Improved dv/dt Capability
- Ro HS pliant
Applications
- LCD/LED/PDP TV
- Lighting
- Uninterruptible Power Supply
- AC- DC Power Supply
DATA SHEET .onsemi.
VDSS 600 V
RDS(on) MAX 340 m W @ 10 V
ID MAX 17 A
GDS TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG
CASE 221AT
MARKING DIAGRAM
FDPF17 N60NT AYWWZZ
FDPF17N60NT = Specific Device Code
= Assembly Location
= Date Code (Year & Week)
= Assembly Lot
N- CHANNEL MOSFET D
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