* RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A
* Low FOM RDS(on)*QG
* Low Reverse Recovery Charge, Qrr
* Soft Reverse Recovery Body Diode
* Enables .

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.

This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features
* RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, I.

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