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FDPF041N06BL1-F154 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

  • RDS(on) = 3.5 mW (Typ. )@ VGS = 10 V, ID = 77 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 77 A, 4.1 mW FDPF041N06BL1-F154 Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System www.onsemi.com VDSS 60 V RDS(ON) MAX 4.