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FDP8874 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters Fea

Key Features

  • rDS(ON) = 5.3mΩ, VGS = 10V, ID = 40A.
  • rDS(ON) = 6.6mΩ, VGS = 4.5V, ID = 40A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN GATE G TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC.

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Datasheet Details

Part number FDP8874
Manufacturer onsemi
File Size 330.48 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP8874 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8874 FDP8874 N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 5.3mΩ, VGS = 10V, ID = 40A • rDS(ON) = 6.6mΩ, VGS = 4.