FDP2D3N10C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDP2D3N10C
Manufacturer	ON Semiconductor
File Size	384.94 KB
Description	N-Channel MOSFET
Datasheet	FDP2D3N10C-ONSemiconductor.pdf

FDP2D3N10C Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimize on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A.
Extremely Low Reverse Recovery Charge, Qrr.
100% UIL Tested.
RoHS Compliant.

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Published: Oct 5, 2020 |