FDP2D3N10C
Description
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
- Extremely Low Reverse Recovery Charge, Qrr
- 100% UIL Tested
- RoHS Compliant
