Full PDF Text Transcription for FDP2D3N10C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FDP2D3N10C. For precise diagrams, and layout, please refer to the original PDF.
MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanc...
View more extracted text
Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDS rDS(ON) MAX ID MAX 100 V 2.
FDP2D3N10C Datasheet
