FDN5618P Datasheet PDF (P-Channel MOSFET) | Download ON Semiconductor FDN5618P

FDN5618P - P-Channel MOSFET

Description

This 60 V P

POWERTRENCH process.

It has been optimized for power management applications.

Features

1.25 A,.
60 V  RDS(on) = 0.170 W @ VGS =.
10 V  RDS(on) = 0.230 W @ VGS =.
4.5 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
This Device is Pb.
Free and Halogen Free.

Datasheet Details

Part number	FDN5618P
Manufacturer	ON Semiconductor
File Size	289.13 KB
Description	P-Channel MOSFET
Datasheet	FDN5618P Datasheet
Additional preview pages of the FDN5618P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, Logic Level, POWERTRENCH) 60 V FDN5618P General Description This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features  −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(on)  This Device is Pb−Free and Halogen Free Applications  DC−DC Converters  Load Switch  Power Management ABSOLUTE MAXIMUM RATINGS TA = 25C unless otherwise noted. Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous (Note 1a) Drain Current – Pulsed −60 V 20 V −1.

Published: Dec 25, 2023 |