FDN5618P P-Channel MOSFET
−1.25 A, −60 V
RDS(on) = 0.170 W @ VGS = −10 V RDS(on) = 0.230 W @ VGS = −4.5 V
Fast Switching Speed
High Performance Trench Technology for .
Features −1.25 A, −60 V RDS(on) = 0.170 W @ VGS = −10 V RDS(on) = 0.230 W @ VGS = −4.5 V Fa.
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