FDN5618P Datasheet | onsemi

Description This 60 V P- Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features - - 1.25 A, - 60 V  RDS(on) = 0.170 W @ VGS = - 10 V  RDS(on) = 0.230 W @ VGS = - 4.5 V - Fast Switching Speed - High Performance Trench Technology for Extremely Low RDS(on) - This Device is Pb- Free and Halogen Free Applications - DC- DC Converters - Load Switch - Power Management ABSOLUTE MAXIMUM RATINGS TA = 25C unless otherwise noted. Symbol Parameter Ratings Unit VDSS VGSS Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous (Note 1a) Drain Current - Pulsed - 60 20 - 1.25 - 10 PD Maximum Power Dissipation (Note 1a) Maximum Power Dissipation (Note 1b) TJ, Operating and Storage Junction TSTG Temperature Range - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter...