FDN5618P
Description
This 60 V P-Channel MOSFET uses onsemi’s high voltage POWERTRENCH process.
Key Features
- 1.25 A, -60 V RDS(on) = 0.170 W @ VGS = -10 V RDS(on) = 0.230 W @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This Device is Pb-Free and Halogen Free
