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FDN5618P - P-Channel MOSFET

FDN5618P Description

MOSFET * P-Channel, Logic Level, POWERTRENCH) 60 V FDN5618P General .
This 60 V P. Channel MOSFET uses onsemi’s high voltage POWERTRENCH process.

FDN5618P Features

* 1.25 A,
* 60 V  RDS(on) = 0.170 W @ VGS =
* 10 V  RDS(on) = 0.230 W @ VGS =
* 4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* This Device is Pb

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDN5618P-like datasheet