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FDN5618P Datasheet, ON Semiconductor

FDN5618P mosfet equivalent, p-channel mosfet.

FDN5618P Avg. rating / M : 1.0 rating-11

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FDN5618P Datasheet

Features and benefits


* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremel.

Application

Features
* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switching.

Description

This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features
* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switchin.

Image gallery

FDN5618P Page 1 FDN5618P Page 2 FDN5618P Page 3

TAGS

FDN5618P
P-Channel
MOSFET
ON Semiconductor

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