FDN360P mosfet equivalent, p-channel mosfet.
* −2 A, −30 V
* RDS(ON) = 80 mW @ VGS = −10 V
* RDS(ON) = 125 mW @ VGS = −4.5 V
* Low Gate Charge (6.2 nC Typical)
* High Performance Trench Technolog.
where low in−line power loss and fast switching are required.
Features
* −2 A, −30 V
* RDS(ON) = 80 mW @ VGS = −.
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