FDN342P
Description
This P-Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process.
Key Features
- RDS(ON) = 0.08 W @ VGS = -4.5 V
- RDS(ON) = 0.13 W @ VGS = -2.5 V
- Rugged gate rating (±12 V)
- High Performance Trench Technology for Extremely Low RDS(ON)
