FDN342P datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* −2 A, −20 V
* RDS(ON) = 0.08 W @ VGS = −4.5 V
* RDS(ON) = 0.13 W @ VGS = −2.5 V
* Rugged gate rating (±12 V).
* High Performance Trench Technology f.

Application

for a wide range of gate drive voltages (2.5 V − 12 V). Applications
* Load Switch
* Battery Protection
* Po.

Description

This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V − 12 V). Applications
* Lo.

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