FDN342P - P-Channel MOSFET

onsemi

General Description

This P

gate version of onsemi’s advanced POWERTRENCH process.

12 V).

Load Switch Battery Pr

Key Features

2 A,.
20 V.
RDS(ON) = 0.08 W @ VGS =.
4.5 V.
RDS(ON) = 0.13 W @ VGS =.
2.5 V.
Rugged gate rating (±12 V).
High Performance Trench Technology for Extremely Low RDS(ON).
Enhanced power SUPERSOTt.
3 (SOT.
23) DATA SHEET www. onsemi. com D S G SOT.
23/.

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FDN342P p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN342P
Manufacturer	onsemi
File Size	305.34 KB
Description	P-Channel MOSFET
Datasheet	FDN342P Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V − 12 V). Applications • Load Switch • Battery Protection • Power Management Features • −2 A, −20 V ♦ RDS(ON) = 0.08 W @ VGS = −4.5 V ♦ RDS(ON) = 0.13 W @ VGS = −2.5 V • Rugged gate rating (±12 V). • High Performance Trench Technology for Extremely Low RDS(ON) • Enhanced power SUPERSOTt−3 (SOT−23) DATA SHEET www.onsemi.