* 2 A, 20 V
* RDS(on) = 70 mW @ VGS = 4.5 V
* RDS(on) = 80 mW @ VGS = 2.5 V
* RDS(on) = 120 mW @ VGS = 1.8 V
* Low Gate Charge (4.5 nC typical)
* .

Features
* 2 A, 20 V
* RDS(on) = 70 mW @ VGS = 4.5 V
* RDS(on) = 80 mW @ VGS = 2.5 V
* RDS(on) = 120 mW.

This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features
* 2 A, 20 V
* RDS(on) = 70 mW @ VGS = 4.5 V
* RDS(on) = 80 mW @ VGS = 2.5 V
* RDS(on) = 120 m.

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