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FDN327N - N-Channel MOSFET

Description

This 20 V N

POWERTRENCH process.

It has been optimized for power management applications.

Features

  • 2 A, 20 V.
  • RDS(on) = 70 mW @ VGS = 4.5 V.
  • RDS(on) = 80 mW @ VGS = 2.5 V.
  • RDS(on) = 120 mW @ VGS = 1.8 V.
  • Low Gate Charge (4.5 nC typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • This Device is Pb.
  • Free and Halogen Free.

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Datasheet preview – FDN327N

Datasheet Details

Part number FDN327N
Manufacturer ON Semiconductor
File Size 289.91 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN327N Datasheet
Additional preview pages of the FDN327N datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V • Low Gate Charge (4.5 nC typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • This Device is Pb−Free and Halogen Free Applications • Load Switch • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
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