FDMS86580-F085 - N-Channel Power MOSFET

onsemi

Key Features

Typical RDS(on) = 7.9 mΩ at VGS = 10V, ID = 50 A.
Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101 Top Pin 1.

FDMS86580-F085 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS86580-F085
Manufacturer	onsemi
File Size	2.30 MB
Description	N-Channel Power MOSFET
Datasheet	FDMS86580-F085 Datasheet

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Full PDF Text Transcription (Reference)

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FDMS86580-F085 N-Channel PowerTrench® MOSFET FDMS86580-F085 N-Channel PowerTrench® MOSFET 60 V, 50 A, 9.6 mΩ Features Typical RDS(on) = 7.9 mΩ at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant Qualified to AEC Q101 Top Pin 1 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.