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FDMS8460 - N-Channel MOSFET

FDMS8460 Description

MOSFET - N‐Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW FDMS8460 General .
This N. Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on.

FDMS8460 Features

* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A
* Advanced Package and Silicon combination for low rDS(on)
* MSL1 robust package design
* 100% UIL tested

FDMS8460 Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current: A
* Continuous (Package limited) TC = 25°C 49
* Continuous (Silicon li

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMS8460-like datasheet