FDMS8460 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A
* Advanced Package and Silicon combination for low rDS(on) .
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to .
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 2.2 mW at VGS.
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