FDMS8460
Description
This N-Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
