FDMS2D4N03S mosfet equivalent, n-channel power mosfet.
General Description
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
* High Performance Technology for Extr.
* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore/ GPU Low Side Switch
* Networking Point of Loa.
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
* High Performance Technology for Extremely Low rDS(on)
* SyncFETTM Schottky Body Diode
* 100% UIL Tested
* RoHS Compliant
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