FDMS2734 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 122 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 130 mW at VGS = 6 V, ID = 1.7 A
* Low Miller Charge
* Optimized Efficiency at High Freque.
Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
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