Datasheet Summary
MOSFET
- N-Channel, UltraFET Trench
250 V, 14 A, 122 mW
General Description UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max RDS(on) = 122 mW at VGS = 10 V, ID = 2.8 A
- Max RDS(on) = 130 mW at VGS = 6 V, ID = 1.7 A
- Low Miller Charge
- Optimized Efficiency at High Frequencies
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC
- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate...
