FDMS2734 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 122 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 130 mW at VGS = 6 V, ID = 1.7 A
* Low Miller Charge
* Optimized Efficiency at High Freque.

Application

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features

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