FDMS037N08B mosfet equivalent, n-channel mosfet.
* RDS(on) = 3.01 mW (Typ.) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)*QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode
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* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection circuit
* DC Motor Drives an.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on−state resistance and while maintaining superior switching performance.
Features
* RDS(on) = 3.01 mW (Typ.) @ VGS = 10 V, ID = .
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