FDMF6821A Datasheet | onsemi

Extra-Small, High-Performance, High-Frequency Dr MOS Module Description The XS™ Dr MOS family is ON Semiconductor’s next- generation, fully optimized, ultra- pact, integrated MOSFET plus driver power stage solution for high- current, high- frequency, synchronous buck DC- DC applications. The FDMF6821A integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra- pact 6x6 mm package. With an integrated approach, the plete switching power stage is optimized with regard to driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). XS Dr MOS uses ON Semiconductor’s high- performance POWERTRENCH® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for snubber circuit in most buck converter applications. A driver IC with reduced dead times and propagation delays further enhances the performance. A thermal warning function warns of a potential over- temperature situation. The FDMF6821A also incorporates a Skip Mode (SMOD#) for improved light- load efficiency. The FDMF6821A also provides a 3- state 3.3 V PWM input for patibility with a wide range of PWM controllers. Features - Over 93% Peak- Efficiency - High- Current Handling: 60 A - High- Performance PQFN Copper- Clip Package - 3- State 3.3 V PWM Input Driver - Skip- Mode SMOD# (Low- Side Gate Turn Off) Input - Thermal Warning Flag for Over- Temperature Condition - Driver Output Disable Function (DISB# Pin) - Internal Pull- Up and Pull- Down for SMOD# and DISB# Inputs, Respectively - ON Semiconductor Power Trench Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing - ON Semiconductor Sync FET (Integrated Schottky Diode) Technology in Low- Side MOSFET - Integrated Bootstrap Schottky Diode - Adaptive Gate Drive Timing for Shoot- Through Protection - Under- Voltage Lockout (UVLO) - Optimized for Switching Frequencies up to 1 MHz - Low- Profile SMD Package - Based on the Intel® 4.0 Dr MOS Standard - This Device is Pb-...