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FDMC86012 - N-Channel MOSFET

Datasheet Details

Part number FDMC86012
Manufacturer onsemi
File Size 541.13 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86012 Datasheet

General Description

This device has been designed specifically to improve the efficiency of DC/DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.

Overview

MOSFET – N-Channel, POWERTRENCH) 30 V, 88 A, 2.7 mW FDMC86012 General.

Key Features

  • Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A.
  • Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A.
  • High Performance Technology for Extremely low RDS(on).
  • Termination is Lead.
  • free.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.