* Max rDS(on) = 13.5 mW @ VGS = −10 V
* 25 V VGS Extended Operating Rating
* 30 V VDS Blocking
* 2 x 2 mm Form Factor
* Low Profile − 0.8 mm Maximum <.

and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25 V. Typical en.

This device is an ultra low resistance P−Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25 V. Typical end systems include .

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