FDMA430NZ Datasheet ON Semiconductor

Features and Benefits

• RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
• RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A
• Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm
• HBM ESD Protection Level > 2.5 kV Typical (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free.