FDMA430NZ mosfet equivalent, n-channel mosfet.
* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
* RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A
* Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
* Li−lon Battery Pack
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit.
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe.
Features
* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
* RDS(on) = 50 mW at VGS = .
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