FDI045N10A mosfet equivalent, n-channel mosfet.
* RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A
* Fast Switching Speed
* Low Gate Charge, QG = 54 nC (Typ.)
* High Performance Trench Technology for E.
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.
This N−Channel MOSFET is produced using ON Semiconductor’s
advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Features
* RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, .
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