FDI045N10A Datasheet | onsemi

Description This N- Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on- state resistance while maintaining superior switching performance. Features - RDS(on) = 3.8 m W ( Typ.) @ VGS = 10 V, ID = 100 A - Fast Switching Speed - Low Gate Charge, QG = 54 n C (Typ.) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - This Device is Pb- Free and is Ro HS pliant Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies - Micro Solar Inverter DATA SHEET .onsemi. TO- 220 CASE 221A- 09 I2PAK CASE 418AV MARKING DIAGRAM $Y&Z&3&K FDP 045N10A $Y&Z&3&K FDI 045N10A $Y &Z &3 &K FDP/FDI045N10A = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.  Semiconductor ponents Industries, LLC, 2011 September, 2024 - Rev. 4 Publication Order Number: FDP045N10A/D FDP045N10A / FDI045N10A MOSFET MAXIMUM RATINGS (TC = 25C Unless Otherwise Noted) Symbol Parameter FDP045N10A_F102 FDI045N10A_F102 Unit VDSS...