FDH210N08 mosfet equivalent, n-channel mosfet.
* RDS(ON) = 4.65 mW (Typ.), VGS = 10 V, ID = 125 A
* Low Gate Charge (Typ. 232 nC)
* Low Crss (Typ. 262 pF)
* 100% Avalanche Tested
* Improved dv/dt C.
such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
UniFET t MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This.
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