FDH047AN08A0
FDH047AN08A0 is N-Channel MOSFET manufactured by onsemi.
Features
- RDS(ON) = 4.0 m W (Typ.), VGS = 10 V, ID = 80 A
- Qg(TOT) = 92 n C (Typ.), VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free and is Ro HS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
DATA SHEET .onsemi.
VDSS 75 V
RDS(ON) MAX 4.7 m W
ID MAX 80 A
TO- 247- 3 CASE 340CK
TO- 220- 3 CASE 340AT
MARKING DIAGRAM
&Z&3&K FDX047AN 08A0
&Z &3 &K FDX047AN08A0 X
= Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code = H/P
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor ponents Industries, LLC, 2003
April, 2023
- Rev. 5
Publication Order Number: FDH047AN08A0/D
FDH047AN08A0, FDP047AN08A0
MOSFET MAXIMUM RATINGS (TC = 25C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGS ID
Drain to Source Voltage Gate to Source Voltage Drain Current
- Continuous (TC < 144C, VGS = 10...
