logo

FDG6332C Datasheet, ON Semiconductor

FDG6332C mosfet equivalent, dual-channel mosfet.

FDG6332C Avg. rating / M : 1.0 rating-11

datasheet Download

FDG6332C Datasheet

Features and benefits


* Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V
* Q2 −0.6 A, −20 V  RDS(ON) = 420 mW @ VGS = −4.5 V  RDS(ON) = 630 mW @ VGS = .

Application

where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical. Features
* Q1 0.7 A, 20 V  RDS(ON) =30.

Description

The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional .

Image gallery

FDG6332C Page 1 FDG6332C Page 2 FDG6332C Page 3

TAGS

FDG6332C
Dual-Channel
MOSFET
FDG6331L
FDG6335N
FDG6301N
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts