* Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V
* Q2 −0.6 A, −20 V  RDS(ON) = 420 mW @ VGS = −4.5 V  RDS(ON) = 630 mW @ VGS = .

where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical. Features
* Q1 0.7 A, 20 V  RDS(ON) =30.

The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional .

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