FDG316P
Description
This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
Key Features
- RDS(ON) = 0.19 W @ VGS = −10 V
- RDS(ON) = 0.30 W @ VGS = −4.5 V
- Low Gate Charge (3.5 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70−6 Surface Mount Package
- These Devices are Pb−Free and are RoHS pliant
Applications
- DC/DC Converter
