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FDG316P - P-Channel MOSFET

Description

This P Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain superior switching performance.

Features

  • 1.6 A,.
  • 30 V.
  • RDS(ON) = 0.19 W @ VGS =.
  • 10 V.
  • RDS(ON) = 0.30 W @ VGS =.
  • 4.5 V.
  • Low Gate Charge (3.5 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDG316P
Manufacturer onsemi
File Size 300.18 KB
Description P-Channel MOSFET
Datasheet download datasheet FDG316P Datasheet
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

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MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • −1.6 A, −30 V ♦ RDS(ON) = 0.19 W @ VGS = −10 V ♦ RDS(ON) = 0.30 W @ VGS = −4.5 V • Low Gate Charge (3.
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