FDG316P Overview
Description
This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- 1.6 A, -30 V
- RDS(ON) = 0.19 W @ VGS = -10 V
- RDS(ON) = 0.30 W @ VGS = -4.5 V
- Low Gate Charge (3.5 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- Compact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS Compliant
