FDG316P
FDG316P is P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- - 1.6 A,
- 30 V
- RDS(ON) = 0.19 W @ VGS =
- 10 V
- RDS(ON) = 0.30 W @ VGS =
- 4.5 V
- Low Gate Charge (3.5 n C Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70- 6 Surface Mount Package
- These Devices are Pb- Free and are Ro HS pliant
Applications
- DC/DC Converter
- Load Switch
- Power Management
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDSS Drain- Source Voltage
- 30
VGSS Gate- Source Voltage
±20
Drain Current
Continuous
- 1.6
(Note 1a)
Pulsed
- 6
Power Dissipation for
(Note...
