FDG316P mosfet equivalent, p-channel mosfet.
* −1.6 A, −30 V
* RDS(ON) = 0.19 W @ VGS = −10 V
* RDS(ON) = 0.30 W @ VGS = −4.5 V
* Low Gate Charge (3.5 nC Typical)
* High Performance Trench Techno.
where low in−line power loss and fast switching are required.
Features
* −1.6 A, −30 V
* RDS(ON) = 0.19 W @ VGS .
This P−Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices are well suited for l.
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