Description
This P
Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain superior switching performance.
Features
- 1.6 A,.
- 30 V.
- RDS(ON) = 0.19 W @ VGS =.
- 10 V.
- RDS(ON) = 0.30 W @ VGS =.
- 4.5 V.
- Low Gate Charge (3.5 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.
FDG316P Datasheet
