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FDG316P Datasheet, ON Semiconductor

FDG316P mosfet equivalent, p-channel mosfet.

FDG316P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 300.18KB)

FDG316P Datasheet

Features and benefits


* −1.6 A, −30 V
* RDS(ON) = 0.19 W @ VGS = −10 V
* RDS(ON) = 0.30 W @ VGS = −4.5 V
* Low Gate Charge (3.5 nC Typical)
* High Performance Trench Techno.

Application

where low in−line power loss and fast switching are required. Features
* −1.6 A, −30 V
* RDS(ON) = 0.19 W @ VGS .

Description

This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for l.

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TAGS

FDG316P
P-Channel
MOSFET
ON Semiconductor

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