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FDD8880 Datasheet N-Channel MOSFET

Manufacturer: onsemi

General Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Overview

MOSFET – N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G.

Key Features

  • rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A.
  • rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A.
  • High Performance Trench Technology for Extremely Low rDS(ON).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.