FDD8880 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
* rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
* High Performance Trench Technology for Extremely Low rDS(ON)
* Low Gat.
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 462.41KB)