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FDD8880 - N-Channel MOSFET

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features

  • rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A.
  • rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A.
  • High Performance Trench Technology for Extremely Low rDS(ON).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDD8880

Datasheet Details

Part number FDD8880
Manufacturer ON Semiconductor
File Size 462.41 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD8880 Datasheet
Additional preview pages of the FDD8880 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A • rDS(ON) = 12 mW, VGS = 4.
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