FDD8880 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
* rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
* High Performance Trench Technology for Extremely Low rDS(ON)
* Low Gat.
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.
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