FDD6N50TM-F085 mosfet equivalent, n-channel mosfet.
* 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
* Low gate charge ( typical 12.8 nC)
* Low Crss ( typical 9 pF)
* Fast switching
* 100% avalanche tested
* .
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior.
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