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FDD6N50TM-F085 - N-Channel MOSFET

FDD6N50TM-F085 Description

FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 500V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.

FDD6N50TM-F085 Features

* 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
* Low gate charge ( typical 12.8 nC)
* Low Crss ( typical 9 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Qualified to AEC Q101

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDD6N50TM-F085-like datasheet