FDD6N50TM-F085 Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Max Operating Temp: 150 °C
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
- Low gate charge ( typical 12.8 nC)
- Low Crss ( typical 9 pF)
- Fast switching
- 100% avalanche tested
