FDD5N50 Key Features
- RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A
- Low Gate Charge (Typ. 11 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FDD5N50 | N-Channel UniFET MOSFET | |
| FDD5N50F | N-Channel MOSFET | |
| FDD5N50FTM_WS | N-Channel MOSFET | |
| FDD5N50NZ | MOSFET | |
| FDD5N50NZF | MOSFET |