FDD5N50 Datasheet | onsemi

Features - RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A - Low Gate Charge (Typ. 11 n C) - Low Crss (Typ. 5 p F) - 100% Avalanche Tested - Ro HS pliant Applications - LCD/LED/PDP TV - Lighting - Uninterruptible Power Supply D-PAK Description Uni FETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate Above 25o C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDD5N50TM-WS 500 ±30 4 2.4 16 256 4 4 4.5 40 0.3 -55 to +150 300 Thermal Characteristics...